파트넘버.co.kr BCW60DLT1 데이터시트 PDF


BCW60DLT1 반도체 회로 부품 판매점

General Purpose Transistors



Motorola  Inc 로고
Motorola Inc
BCW60DLT1 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW60ALT1/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
BCW60ALT1
BCW60BLT1
BCW60DLT1
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD
Value
32
32
5.0
100
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 2.0 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 32 Vdc)
(VCE = 32 Vdc, TA = 150°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)EBO
ICES
IEBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
32 — Vdc
5.0 — Vdc
— 20 nAdc
— 20 µAdc
nAdc
— 20
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1


BCW60DLT1 데이터시트, 핀배열, 회로
BCW60ALT1 BCW60BLT1 BCW60DLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µAdc, VCE = 5.0 Vdc)
BCW60A
BCW60B
BCW60D
hFE
20 —
30 —
100 —
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
BCW60A
BCW60B
BCW60D
120 220
175 310
380 630
(IC = 50 mAdc, VCE = 1.0 Vdc)
BCW60A
BCW60B
BCW60D
AC Current Gain
(VCE = 5.0 Vdc, IC = 2.0 mAdc, f = 1.0 kHz)
BCW60A
BCW60B
BCW60D
Collector – Emitter Saturation Voltage
(IC = 50 mAdc, IB = 1.25 mAdc)
(IC = 10 mAdc, IB = 0.25 mAdc)
Base – Emitter Saturation Voltage
(IC = 50 mAdc, IB = 1.25 mAdc)
(IC = 50 mAdc, IB = 0.25 mAdc)
Base – Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCE = 10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
Turn–On Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
Turn–Off Time
(IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k, RL = 990 )
60 —
70 —
100 —
hfe —
125 250
175 350
350 700
VCE(sat)
Vdc
0.55
0.35
VBE(sat)
Vdc
0.7 1.05
0.6 0.85
VBE(on)
Vdc
0.6 0.75
fT MHz
125 —
Cobo
pF
— 4.5
NF dB
— 6.0
ton ns
— 150
toff ns
— 800
EQUIVALENT SWITCHING TIME TEST CIRCUITS
300 ns
DUTY CYCLE = 2%
– 0.5 V
<1.0 ns
+ 3.0 V
+10.9 V
10 k
275
10 < t1 < 500 µs
DUTY CYCLE = 2%
0
t1
CS < 4.0 pF*
– 9.1 V
+10.9 V
10 k
< 1.0 ns 1N916
+ 3.0 V
275
CS < 4.0 pF*
Figure 1. Turn–On Time
*Total shunt capacitance of test jig and connectors
Figure 2. Turn–Off Time
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data




PDF 파일 내의 페이지 : 총 8 페이지

제조업체: Motorola Inc

( motorola )

BCW60DLT1 transistor

데이터시트 다운로드
:

[ BCW60DLT1.PDF ]

[ BCW60DLT1 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BCW60DLT1

General Purpose Transistors - Motorola Inc