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NPN Silicon AF Transistors



Infineon Technologies AG 로고
Infineon Technologies AG
BCW60D 데이터시트, 핀배열, 회로
NPN Silicon AF Transistors
BCW60, BCX70
 For AF input stages and driver applications
 High current gain
 Low collector-emitter saturation voltage
 Low noise between 30 Hz and 15 kHz
Complementary types: BCW61, BCX71 (PNP)
3
2
1 VPS05161
Type
BCW60A
BCW60B
BCW60C
BCW60D
BCW60FF
BCW60FN
BCX70G
BCX70H
BCX70J
BCX70K
Marking
AAs
ABs
ACs
ADs
AFs
ANs
AGs
AHs
AJs
AKs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
1 Jan-29-2002


BCW60D 데이터시트, 핀배열, 회로
BCW60, BCX70
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Peak base current
Total power dissipation, TS = 71 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VEBO
IC
ICM
IBM
Ptot
Tj
Tstg
BCW60
32
32
5
BCW60FF BCX70
32 45
32 45
55
100
200
200
330
150
-65 ... 150
Unit
V
mA
mW
°C
RthJS
240
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCW60/60FF
BCX70
V(BR)CEO
32
45
-
-
-
-
Unit
V
Collector-base breakdown voltage
IC = 10 µA, IB = 0
BCW60/60FF
BCX70
Emitter-base breakdown voltage
IE = 1 µA, IC = 0
V(BR)CBO
V(BR)EBO
32
45
5
-
-
-
-
-
-
1For calculation of RthJA please refer to Application Note Thermal Resistance
2 Jan-29-2002




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제조업체: Infineon Technologies AG

( infineon )

BCW60D transistor

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