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Infineon Technologies AG |
NPN Silicon AF Transistors
BCW60, BCX70
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW61, BCX71 (PNP)
3
2
1 VPS05161
Type
BCW60A
BCW60B
BCW60C
BCW60D
BCW60FF
BCW60FN
BCX70G
BCX70H
BCX70J
BCX70K
Marking
AAs
ABs
ACs
ADs
AFs
ANs
AGs
AHs
AJs
AKs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
1 Jan-29-2002
BCW60, BCX70
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Peak base current
Total power dissipation, TS = 71 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VEBO
IC
ICM
IBM
Ptot
Tj
Tstg
BCW60
32
32
5
BCW60FF BCX70
32 45
32 45
55
100
200
200
330
150
-65 ... 150
Unit
V
mA
mW
°C
RthJS
240
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCW60/60FF
BCX70
V(BR)CEO
32
45
-
-
-
-
Unit
V
Collector-base breakdown voltage
IC = 10 µA, IB = 0
BCW60/60FF
BCX70
Emitter-base breakdown voltage
IE = 1 µA, IC = 0
V(BR)CBO
V(BR)EBO
32
45
5
-
-
-
-
-
-
1For calculation of RthJA please refer to Application Note Thermal Resistance
2 Jan-29-2002
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