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NXP Semiconductors |
BCV63; BCV63B
NPN general-purpose double transistors
Rev. 4 — 4 August 2010
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number
BCV63
BCV63B
Package
NXP
SOT143B
JEITA
-
PNP complement
-
BCV64B
1.2 Features and benefits
Low current (max. 100 mA)
Low voltage (max. 30 V and 6 V)
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
General-purpose switching and amplification
For use in Schmitt trigger applications
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Per transistor
IC collector current
Transistor TR1
VCEO
hFE
collector-emitter voltage
DC current gain
BCV63
open base
VCE = 5 V; IC = 2 mA
BCV63B
Min Typ Max Unit
- - 100 mA
- - 30 V
110 -
200 -
800
450
NXP Semiconductors
BCV63; BCV63B
NPN general-purpose double transistors
Table 2. Quick reference data …continued
Symbol Parameter
Conditions
Min Typ Max Unit
Transistor TR2
VCEO
hFE
collector-emitter voltage
DC current gain
BCV63
open base
VCE = 700 mV; IC = 2 mA
-
[1]
110
-
-
6V
800
BCV63B
200 -
450
[1] Group selection will be done on TR1. Due to matched dies, hFE values for TR2 are the same as for TR1.
2. Pinning information
Table 3.
Pin
1
2
3
4
Pinning
Description
collector TR2 and base TR1
collector TR1
emitter TR1 and TR2
base TR2
Simplified outline Graphic symbol
43
21
12
TR1
TR2
34
006aab228
3. Ordering information
Table 4. Ordering information
Type number
Package
Name Description
BCV63
- plastic surface-mounted package; 4 leads
BCV63B
4. Marking
Table 5. Marking codes
Type number
BCV63
BCV63B
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking code[1]
*D5
*D6
Version
SOT143B
BCV63_63B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 4 August 2010
© NXP B.V. 2010. All rights reserved.
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