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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D071
BCV62
PNP general purpose
double transistor
Product specification
Supersedes data of 1997 Jun 18
1999 Apr 08
Philips Semiconductors
PNP general purpose double transistor
Product specification
BCV62
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 30 V)
• Matched pair.
APPLICATIONS
• For use in applications where the working point must be
independent of temperature
• Current mirrors.
DESCRIPTION
PNP double transistor in a SOT143B plastic package.
NPN complement: BCV61.
PINNING
PIN
1
2
3
4
DESCRIPTION
collector TR2; base TR1 and TR2
collector TR1
emitter TR1
emitter TR2
handbook, halfpag4e
3
21
TR1 TR2
MARKING
TYPE
NUMBER
BCV62
BCV62A
MARKING TYPE
CODE NUMBER
3Mp BCV62B
3Jp BCV62C
MARKING
CODE
3Kp
3Lp
1
Top view
2
3
MAM292
4
Fig.1 Simplified outline (SOT143B) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBS
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage TR1
collector-emitter voltage TR1
emitter-base voltage
collector current (DC)
peak collector current
peak base current TR1
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
VCE = 0
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−30
−30
−6
−100
−200
−200
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 08
2
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