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Número de pieza | BCV61C | |
Descripción | NPN Silicon Double Transistor | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCV61C (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! NPN Silicon Double Transistor
• To be used as a current mirror
• Good thermal coupling and VBE matching
• High current gain
• Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BCV61
3
4
2
1
C1 (2)
C2 (1)
Tr.1 Tr.2
Type
BCV61B
BCV61C
Marking
1Ks
1Ls
E1 (3)
E2 (4)
EHA00012
1 = C2
1 = C2
Pin Configuration
2 = C1 3 = E1 4 = E2
2 = C1 3 = E1 4 = E2
Package
SOT143
SOT143
Maximum Ratings
Parameter
Collector-emitter voltage
(transistor T1)
Symbol
VCEO
Value
30
Collector-base voltage (open emitter)
(transistor T1)
VCBO
30
Emitter-base voltage
DC collector current
Peak collector current, tp < 10 ms
Base peak current (transistor T1)
Total power dissipation, TS = 99 °C
Junction temperature
Storage temperature
VEBS
IC
ICM
IBM
Ptot
Tj
Tstg
6
100
200
200
300
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
≤170
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
K/W
1 2011-10-13
1 page BCV61
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
Total power dissipation Ptot = f(TS)
12
pF
10
9
8
7
6
5
CEB
4
3
2
1
00 4 8 12
Permissible pulse load
Ptotmax / PtotDC = f (tp)
CCB
16 V
22
VCB(VEB
350
mW
250
200
150
100
50
00 15 30 45 60 75 90 105 120 °C 150
TS
10 3 BCV 61
Ptot max
Ptot DC
5
10 2
5
10 1
5
EHP00942
D = tp
T
tp
T
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
s
tp
10 0
5
2011-10-13
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet BCV61C.PDF ] |
Número de pieza | Descripción | Fabricantes |
BCV61 | NPN general purpose double transistor | NXP Semiconductors |
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BCV61 | NPN Silicon Double Transistor | Infineon Technologies AG |
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