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Siemens Semiconductor Group |
NPN Silicon Double Transistors
Preliminary Data
q To be used as a current mirror
q Good thermal coupling and VBE matching
q High current gain
q Low emitter-saturation voltage
BCV 61
Type
BCV 61 A
BCV 61 B
BCV 61 C
Marking
1Js
1Ks
1Ls
Ordering Code
(tape and reel)
Q62702-C2155
Q62702-C2156
Q62702-C2157
Pin Configuration
Package1)
SOT-143
Maximum Ratings
Parameter
Collector-emitter voltage
(transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
Collector current
Collector peak current
Base peak current (transistor T1)
Total power dissipation, TS ≤ 99 ˚C2)
Junction temperature
Storage temperature range
Symbol
VCE0
VCB0
VEBS
IC
ICM
IBM
Ptot
Tj
Tstg
Values
30
Unit
V
30
6
100 mA
200
200
300 mW
150 ˚C
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Rth JA
Rth JS
≤ 240
≤ 170
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
K/W
Semiconductor Group
1
5.91
BCV 61
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics for transistor T1
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150 ˚C
DC current gain1)
IC = 0.1 mA, VCE = 5 V
IC = 2 mA, VCE = 5 V
BCV 61 A
BCV 61 B
BCV 61 C
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter saturation voltage1)
IC = 10 mA, IC = 0.5 mA
IC = 100 mA, IC = 5 mA
Base-emitter voltage
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 30
–
–
V
V(BR)CB0 30
–
–
V(BR)EBS 6 – –
ICB0
hFE
VCEsat
VBEsat
VBE
– – 15 nA
– – 5 µA
–
100 –
110 180 220
200 290 450
420 520 800
mV
– 90 250
– 200 600
– 700 –
– 900 –
580 660 700
– – 770
1) Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
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