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NXP Semiconductors |
BCV61
NPN general-purpose double transistors
Rev. 04 — 18 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number
BCV61
BCV61A
BCV61B
BCV61C
Package
NXP
SOT143B
JEITA
-
PNP complement
BCV62
BCV62A
BCV62B
BCV62C
1.2 Features
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pairs
1.3 Applications
Applications with working point independent of temperature
Current mirrors
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
collector TR2;
base TR1 and TR2
collector TR1
emitter TR1
emitter TR2
Simplified outline Graphic symbol
43
43
12
TR2 TR1
12
006aaa842
NXP Semiconductors
BCV61
NPN general-purpose double transistors
3. Ordering information
Table 3. Ordering information
Type number
Package
Name Description
BCV61
- plastic surface-mounted package; 4 leads
BCV61A
BCV61B
BCV61C
4. Marking
Table 4. Marking codes
Type number
BCV61
BCV61A
BCV61B
BCV61C
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
1M*
1J*
1K*
1L*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
collector-base voltage
VCEO
collector-emitter voltage
VEBS
emitter-base voltage
IC collector current
ICM peak collector current
IBM peak base current
Per device
open emitter
open base
VCE = 0 V
-
-
-
-
-
-
Ptot
Tj
Tamb
Tstg
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
[1] -
-
−65
−65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
Version
SOT143B
Max Unit
30 V
30 V
6V
100 mA
200 mA
200 mA
250
150
+150
+150
mW
°C
°C
°C
BCV61_4
Product data sheet
Rev. 04 — 18 December 2009
© NXP B.V. 2009. All rights reserved.
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