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BCV47 반도체 회로 부품 판매점

Surface mount Si-Epitaxial PlanarTransistors



Diotec Semiconductor 로고
Diotec Semiconductor
BCV47 데이터시트, 핀배열, 회로
BCV27, BCV47
Darlington Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Version 2004-01-20
Power dissipation – Verlustleistung
2.9 ±0.1
0.4
3
Type
Code
1
1.9
2
1.1
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B1 2 = E2 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
NPN
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
Collector-Base-voltage
VBE = 0
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Base current – Basisstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
VCES
VCB0
VEB0
Ptot
IC
ICM
IB
Tj
TS
Grenzwerte (TA = 25/C)
BCV27
BCV47
30 V
60 V
40 V
80 V
10 V
250 mW 1)
500 mA
800 mA
100 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 30 V
IE = 0, VCB = 60 V
BCV27
BCV47
ICB0
ICB0
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 10 V
IEB0
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
IC = 100 mA, IB = 0.1 mA
VCEsat
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 100 nA
– – 100 nA
– – 100 nA
– – 1V
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
8


BCV47 데이터시트, 핀배열, 회로
Darlington Transistors
BCV27, BCV47
Characteristics (Tj = 25/C)
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 100 mA, IB = 0.1 mA
VBEsat
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 5 V, IC = 1 mA
BCV27
BCV47
hFE
hFE
VCE = 5 V, IC = 10 mA
BCV27
BCV47
hFE
hFE
VCE = 5 V, IC = 100 mA
BCV27
BCV47
hFE
hFE
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 5 V, IC = 10 mA
- VBEon
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 1.5 V
4000
2000
10000
4000
20000
10000
– – 1.4 V
– 220 MHz –
RthA 420 K/W 2)
BCV26, BCV46
Marking – Stempelung
Pinning – Anschlußbelegung
BCV27 = FF
BCV47 = FG
3
T1
T2
12
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
9




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BCV47 transistor

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