BCV46 반도체 회로 부품 판매점
PNP Silicon Darlington Transistors (For general AF applications High collector current)
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 Siemens Semiconductor Group |
PNP Silicon Darlington Transistors
q For general AF applications
q High collector current
q High current gain
q Complementary types: BCV 27, BCV 47 (NPN)
BCV 26
BCV 46
Type
BCV 26
BCV 46
Marking
FDs
FEs
Ordering Code
(tape and reel)
Q62702-C1493
Q62702-C1475
Pin Configuration
123
BEC
Package1)
SOT-23
Maximum Ratings
Parameter
Symbol Values
BCV 26
Collector-emitter voltage
VCE0
30
Collector-base voltage
VCB0
40
Emitter-base voltage
VEB0
10
Collector current
IC
Peak collector current
ICM
Base current
IB
Peak base current
IBM
Total power dissipation, TS = 74 ˚C Ptot
Junction temperature
Tj
Storage temperature range
Tstg
BCV 46
60
80
10
500
800
100
200
360
150
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Rth JA
Rth JS
≤ 280
≤ 210
Unit
V
mA
mW
˚C
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BCV 26
BCV 46
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BCV 26
BCV 46
Collector-base breakdown voltage
IC = 100 µA
BCV 26
BCV 46
Emitter-base breakdown voltage, IE = 10 µA
Collector cutoff current
VCB = 30 V
VCB = 60 V
VCB = 30 V, TA = 150 ˚C
VCB = 60 V, TA = 150 ˚C
BCV 26
BCV 46
BCV 26
BCV 46
Emitter cutoff current, VEB = 4 V
DC current gain1)
IC = 100 µA, VCE = 1 V
IC = 10 mA, VCE = 5 V
IC = 100 mA, VCE = 5 V
IC = 0.5 A, VCE = 5 V
BCV 26
BCV 46
BCV 26
BCV 46
BCV 26
BCV 46
BCV 26
BCV 46
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
Base-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
V(BR)CE0
V(BR)CB0
30
60
–
–
V(BR)EB0
ICB0
IEB0
hFE
VCEsat
40 –
80 –
10 –
––
––
––
––
––
4000
2000
10000
4000
20000
10000
4000
2000
–
–
–
–
–
–
–
–
––
VBEsat
–
–
V
–
–
–
–
–
100 nA
100 nA
10 µA
10 µA
100 nA
–
–
–
–
–
–
–
–
–
1V
1.5
AC characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance
VCB = 10 V, f = 1 MHz
fT
Cobo
–
–
200 –
4.5 –
MHz
pF
1) Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
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PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Siemens Semiconductor Group
( siemens )
BCV46 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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