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Infineon Technologies AG |
PNP Silicon Darlington Transistors
For general AF applications
High collector current
High current gain
Complementary types: BCV27, BCV47 (NPN)
BCV26, BCV46
3
2
1 VPS05161
Type
BCV26
BCV46
Marking
FDs
FEs
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 74 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BCV26
BCV46
30 60
40 80
10 10
500
800
100
200
360
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
210
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
K/W
1 Jul-13-2001
BCV26, BCV46
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCV26
BCV46
V(BR)CEO
30
60
-
-
V
-
-
Collector-base breakdown voltage
IC = 100 µA, IB = 0
BCV26
BCV46
V(BR)CBO
40
80
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
VCB = 60 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
VCB = 60 V, IE = 0 , TA = 150 °C
BCV26
BCV46
BCV26
BCV46
V(BR)EBO 10
ICBO
ICBO
-
-
-
-
--
nA
- 100
- 100
µA
- 10
- 10
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)
IC = 100 µA, VCE = 1 V
BCV26
BCV46
IEBO
hFE
- - 100 nA
4000
2000
-
-
-
-
-
DC current gain 1)
IC = 10 mA, VCE = 5 V
BCV26
BCV46
hFE
10000
4000
-
-
-
-
DC current gain 1)
IC = 100 mA, VCE = 5 V
BCV26
BCV46
hFE
20000
10000
-
-
-
-
DC current gain 1)
IC = 0.5 A, VCE = 5 V
BCV26
BCV46
hFE
4000
2000
-
-
-
-
1) Pulse test: t ≤ 300µs, D = 2%
2
Jul-13-2001
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