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Fairchild Semiconductor |
Discrete POWER & Signal
Technologies
BCV26
C
SOT-23
Mark: FD
E
B
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
30
40
10
1.2
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Max
*BCV26
350
2.8
357
Units
V
V
V
A
°C
Units
mW
mW /°C
°C/W
ã 1997 Fairchild Semiconductor Corporation
PNP Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO Collector-Cutoff Current
IEBO Emitter-Cutoff Current
IC = 10 mA, IB = 0
IC = 10 µA, IE = 0
IE = 100 nA, IC = 0
VCB = 30 V, IE = 0
VEB = 10 V, IC = 0
30 V
40 V
10 V
0.1 µA
0.1 µA
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
IC = 100 mA, IB = 0.1 mA
IC = 100 mA, IB = 0.1 mA
4,000
10,000
20,000
1.0 V
1.5 V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
CC Collector Capacitance
IC = 30 mA, VCE = 5.0 V,
f = 100 MHz
VCB = 30 V, IE = 0, f = 1.0 MHz
220 MHz
3.5 pF
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
50
VCE = 5V
40
30 125 °C
20 25 °C
10 - 40 °C
0
0.01
0.1
I C - COLLECTOR CURRENT (A)
1
Collector-Emitter Saturation
Voltage vs Collector Current
1.6
β = 1000
1.2
- 40 ºC
0.8
0.4
25 °C
125 ºC
0
0.001
0.01 0.1
I C - COLLECTOR CURRENT (A)
1
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