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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BCV26; BCV46
PNP Darlington transistors
Product specification
Supersedes data of 1997 Apr 23
1999 Apr 08
Philips Semiconductors
PNP Darlington transistors
Product specification
BCV26; BCV46
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 60 V)
• Very high DC current gain (min. 10000).
APPLICATIONS
• Where very high amplification is required.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP Darlington transistor in a SOT23 plastic package.
NPN complements: BCV27 and BCV47.
MARKING
TYPE NUMBER
BCV26
BCV46
MARKING CODE(1)
FD∗
FE∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
1
Top view
2
13
TR1
TR2
2
MAM299
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
collector-base voltage
BCV26
BCV46
collector-emitter voltage
BCV26
BCV46
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
VBE = 0
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
− −40 V
− −80 V
− −30 V
− −60 V
− −10 V
−
−500
mA
−
−800
mA
−
−100
mA
− 250 mW
−65
+150
°C
− 150 °C
−65
+150
°C
1999 Apr 08
2
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