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Siemens Semiconductor Group |
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=1kΩ, R2=1kΩ)
BCR 571
Type
BCR 571
Marking Ordering Code Pin Configuration
XXs UPON INQUIRY 1 = B 2 = E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Values
50
50
5
10
500
330
150
- 65 ... + 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction ambient 1)
Junction - soldering point
RthJA
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
≤ 325
≤ 215
K/W
Semiconductor Group
1
Nov-27-1996
BCR 571
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Unit
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Collector cutoff current
VCB = 40 V, IE = 0
Emitter cutoff current
VEB = 5 V, IC = 0
DC current gain
IC = 50 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 50 mA, IB = 2.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
IC = 10 mA, VCE = 0.3 V
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
1) Pulse test: t < 300µs; D < 2%
V(BR)CEO
50
V(BR)CBO
50
ICBO
-
IEBO
-
hFE
20
VCEsat
-
Vi(off)
0.6
Vi(on)
1
R1
R1/R2
0.7
0.9
fT
-
V
--
--
nA
- 100
mA
- 3.75
-
--
V
- 0.3
- 1.5
- 1.8
1 1.3 kΩ
1 1.1 -
150 -
MHz
Semiconductor Group
2
Nov-27-1996
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