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Infineon Technologies AG |
BCR503
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R1=2.2k, R2=2.2k)
C
3
R1
R2
3
2
1 VPS05161
Type
BCR503
Marking
XAs
12
BE
EHA07184
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
50
50
10
12
500
330
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
215
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
K/W
1 Jun-29-2001
BCR503
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Collector cutoff current
VCB = 40 V, IE = 0
Emitter cutoff current
VEB = 10 V, IC = 0
DC current gain 1)
IC = 50 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 50 mA, IB = 2.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
IC = 10 mA, VCE = 0.3 V
Input resistor
Resistor ratio
V(BR)CEO 50
-
-V
V(BR)CBO 50
-
-
ICBO
- - 100 nA
IEBO
- - 3.5 mA
hFE
40 -
--
VCEsat - - 0.3 V
Vi(off)
0.6 - 1.5 V
Vi(on)
R1
R1/R2
1 - 1.8 V
1.5 2.2 2.9 k
0.9 1 1.1 -
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
fT - 100 - MHz
1) Pulse test: t < 300s; D < 2%
2
Jun-29-2001
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