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BCR19PN 반도체 회로 부품 판매점

NPN/PNP Silicon Digital Transistor Array



Infineon Technologies AG 로고
Infineon Technologies AG
BCR19PN 데이터시트, 핀배열, 회로
BCR19PN
NPN/PNP Silicon Digital Transistor Array
 Switching circuit, inverter, interface circuit,
driver circuit
 Two (galvanic) internal isolated NPN/PNP
Transistors in one package
 Built in bias resistor (R1=4.7k)
4
5
6
Tape loading orientation
Top View
654
W1s
123
Direction of Unreeling
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA07193
C1 B2 E2
654
R1
R1
TR1
TR2
123
E1 B1 C2
EHA07290
3
2
1
VPS05604
Type
BCR19PN
Marking
W2s
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
50
50
10
15
100
250
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
 140
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
K/W
1 Nov-29-2001


BCR19PN 데이터시트, 핀배열, 회로
BCR19PN
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 40 V, IE = 0
DC current gain 1)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Input resistor
V(BR)CEO 50
-
-V
V(BR)CBO 50
-
-
V(BR)EBO 10
-
-
ICBO
- - 100 nA
hFE 120 - 630 -
VCEsat - - 0.3 V
Vi(off)
0.4 - 0.8
Vi(on)
R1
0.5 - 1.1
3.2 4.7 6.2 k
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 150 - MHz
Ccb - 3 - pF
1) Pulse test: t < 300s; D < 2%
2
Nov-29-2001




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BCR19PN transistor

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NPN/PNP Silicon Digital Transistor Array - Infineon Technologies AG