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BCR198S 반도체 회로 부품 판매점

PNP Silicon Digital Transistor



Infineon Technologies AG 로고
Infineon Technologies AG
BCR198S 데이터시트, 핀배열, 회로
BCR198S
PNP Silicon Digital Transistor Array
 Switching circuit, inverter, interface circuit,
driver circuit
 Two ( galvanic) internal isolated Transistors
with good matching in one package
 Built in bias resistor (R1=47k, R2=47k)
C1 B2 E2
654
4
5
6
3
2
1
VPS05604
Type
BCR198S
Marking
WRs
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07173
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
RthJS
Value
50
50
10
50
70
250
150
-65 ... 150
 140
Unit
V
mA
mW
°C
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Dec-13-2001


BCR198S 데이터시트, 핀배열, 회로
BCR198S
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 40 V, IE = 0
Emitter cutoff current
VEB = 10 V, IC = 0
DC current gain 1)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Input resistor
Resistor ratio
V(BR)CEO 50
-
-V
V(BR)CBO 50
-
-
V(BR)EBO - - -
ICBO
- - 100 nA
IEBO
- - 164 µA
hFE
70 -
--
VCEsat - - 0.3 V
Vi(off)
0.8 - 1.5
Vi(on)
1-3
R1
R1/R2
32 47 62 k
0.9 1 1.1 -
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 190 - MHz
Ccb - 3 - pF
1) Pulse test: t < 300s; D < 2%
2
Dec-13-2001




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BCR198S transistor

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