BCR192U 반도체 회로 부품 판매점
PNP Silicon Digital Transistor
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 Infineon Technologies AG |
BCR192U
PNP Silicon Digital Transistor Array
Preliminary data
Switching circuit, inverter, interface circuit,
driver circuit
Two ( galvanic) internal isolated Transistors
with good matching in one package
Built in bias resistor (R1=22k, R2=47k)
C1 B2 E2
654
4
5
6
3
2
1
VPW09197
Type
BCR192U
Marking
WPs
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07173
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 118 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
RthJS
Value
50
50
10
30
100
250
150
-65 ... 150
130
Unit
V
mA
mW
°C
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Dec-13-2001
BCR192U
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Collector cutoff current
VCB = 40 V, IE = 0
Emitter cutoff current
VEB = 10 V, IC = 0
DC current gain 1)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Input resistor
Resistor ratio
V(BR)CEO 50
-
-V
V(BR)CBO 50
-
-
ICBO
- - 100 nA
IEBO
- - 227 µA
hFE
70 -
--
VCEsat - - 0.3 V
Vi(off)
0.5 - 1.2
Vi(on)
0.8 - 2.5
R1
R1/R2
15 22 29 k
0.42 0.47 0.52 -
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 200 - MHz
Ccb - 3 - pF
1) Pulse test: t < 300s; D < 2%
2
Dec-13-2001
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PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Infineon Technologies AG
( infineon )
BCR192U transistor
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[ BCR192U.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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