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Infineon Technologies AG |
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 22kΩ , R2 = 47kΩ )
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR192...
BCR192/F/L3
BCR192T/W
C
3
R1
R2
1
B
2
E
EHA07183
Type
BCR192
BCR192F
BCR192L3
BCR192T
BCR192U
BCR192W
BCR192U
C1 B2 E2
654
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07173
Marking
WPs 1=B
WPs 1=B
WP 1=B
WPs 1=B
WPs 1=E1
WPs 1=B
Pin Configuration
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=B1 3=C2 4=E2 5=B2
2=E 3=C -
-
-
-
-
-
6=C1
-
Package
SOT23
TSFP-3
TSLP-3-4
SC75
SC74
SOT323
1 Aug-29-2003
BCR192...
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR192, TS ≤ 102°C
BCR192F, TS ≤ 128°C
BCR192L3, TS ≤ 135°C
BCR192T, TS ≤ 109°C
BCR192U, TS ≤ 118°C
BCR192W, TS ≤ 124°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR192
BCR192F
BCR192L3
BCR192T
BCR192U
BCR192W
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
50
50
50
30
100
200
250
250
250
250
250
150
150 ... -65
Value
≤ 240
≤ 90
≤ 60
≤ 165
≤ 133
≤ 105
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 Aug-29-2003
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