|
Infineon Technologies AG |
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 22kΩ , R2 = 22kΩ )
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR191.../SEMB1
BCR191/F/L3
BCR191T/W
C
3
R1
R2
1
B
2
E
EHA07183
Type
BCR191
BCR191F
BCR191L3
BCR191S
BCR191T
BCR191W
SEMB1
BCR191S
SEMB1
C1 B2 E2
654
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07173
Marking
Pin Configuration
Package
WOs 1=B 2=E 3=C - - - SOT23
WOs 1=B 2=E 3=C - - - TSFP-3
WO 1=B 2=E 3=C - - - TSLP-3-4
WOs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
WOs 1=B 2=E 3=C - - - SC75
WOs 1=B 2=E 3=C - - - SOT323
WO 1=E1 2=B2 3=C2 4=E2 5=B2 6=C1 SOT666
1 May-18-2004
BCR191.../SEMB1
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR191, TS ≤ 102°C
BCR191F, TS ≤ 128°C
BCR191L3, TS ≤ 135°C
BCR191S, TS ≤ 115°C
BCR191T, TS ≤ 109°C
BCR191W, TS ≤ 124°C
SEMB1, TS ≤ 75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR191
BCR191F
BCR191L3
BCR191S
BCR191T
BCR191W
SEMB1
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
50
50
10
30
100
200
250
250
250
250
250
250
150
150 ... -65
Value
≤ 240
≤ 90
≤ 60
≤ 140
≤ 165
≤ 105
≤ 300
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 May-18-2004
|