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Siemens Semiconductor Group |
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=22kΩ, R2=22kΩ)
BCR 191
Type
BCR 191
Marking Ordering Code Pin Configuration
WOs Q62702-C2264 1=B
2=E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 102°C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Values
50
50
10
30
100
200
150
≤ 65 ... + 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction ambient 1)
Junction - soldering point
RthJA
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
≤ 350
≤ 240
K/W
Semiconductor Group
1
Nov-27-1996
BCR 191
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Unit
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Collector cutoff current
VCB = 40 V, IE = 0
Emitter cutoff current
VEB = 10 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Input resistor
Resistor ratio
V(BR)CEO
50
V(BR)CBO
50
ICBO
-
IEBO
-
hFE
50
VCEsat
-
Vi(off)
0.8
Vi(on)
1
R1
R1/R2
15
0.9
-
-
-
-
-
-
-
-
22
1
-
-
100
350
-
0.3
1.5
2.5
29
1.1
V
nA
µA
-
V
kΩ
-
AC Characteristics
Transition frequency
fT
IC = 10 mA, VCE = 5 V, f = 100 MHz
-
Collector-base capacitance
Ccb
VCB = 10 V, f = 1 MHz
1) Pulse test: t < 300µs; D < 2%
-
200 -
3-
MHz
pF
Semiconductor Group
2
Nov-27-1996
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