|
Infineon Technologies AG |
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 4.7k Ω)
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR169.../SEMB3
BCR169/F/L3
BCR169T/W
C
3
R1
12
BE
EHA07180
Type
BCR169
BCR169F
BCR169L3
BCR169S
BCR169T
BCR169U
BCR169W
SEMB3
BCR169S/U
SEMB3
C1 B2 E2
654
R1
TR1
R1
TR2
123
E1 B1 C2
EHA07266
Marking
Pin Configuration
Package
WSs 1=B 2=E 3=C - - - SOT23
WSs 1=B 2=E 3=C - - - TSFP-3
WS 1=B 2=E 3=C - - - TSLP-3-4
WSs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT323
WSs 1=B 2=E 3=C - - - SC75
WSs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
WSs 1=B 2=E 3=C - - - SOT323
WS 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1 May-18-2004
BCR169.../SEMB3
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR169, TS ≤ 102°C
BCR169F, TS ≤ 128°C
BCR169L3, TS ≤ 135°C
BCR169S, TS ≤ 115°C
BCR169T, TS ≤ 109°C
BCR169U, TS ≤ 118°C
BCR169W, TS ≤ 124°C
SEMB3, TS ≤ 75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR169
BCR169F
BCR169L3
BCR169S
BCR169T
BCR169U
BCR169W
SEMB3
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
50
50
5
15
100
200
250
250
250
250
250
250
250
150
-65 ... 150
Value
≤ 240
≤ 90
≤ 60
≤ 140
≤ 165
≤ 133
≤ 105
≤ 300
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 May-18-2004
|