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Siemens Semiconductor Group |
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
drivere circuit
• Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ)
BCR 162W
Type
BCR 162W
Marking Ordering Code Pin Configuration
WUs UPON INQUIRY 1=B
2=E
3=C
Package
SOT-323
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 124°C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Values
50
50
10
15
100
250
150
- 65 ... + 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction ambient 1)
Junction - soldering point
RthJA
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
≤ 240
≤ 105
K/W
Semiconductor Group
1
Nov-26-1996
BCR 162W
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Unit
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 100 µA, IB = 0
50 -
-
Collector-base breakdown voltage
V(BR)CBO
IC = 10 µA, IB = 0
50 -
-
Collector cutoff current
ICBO
nA
VCB = 40 V, IE = 0
--
100
Emitter cutoff current
IEBO
mA
VEB = 10 V, IC = 0
--
1.61
DC current gain
hFE
-
IC = 5 mA, VCE = 5 V
20 -
-
Collector-emitter saturation voltage 1) VCEsat
V
IC = 50 mA, IB = 2.5 mA
--
0.3
Input off voltage
Vi(off)
IC = 100 µA, VCE = 5 V
0.8 -
1.5
Input on Voltage
Vi(on)
IC = 2 mA, VCE = 0.3 V
1-
2.5
Input resistor
R1 3.2 4.7 6.2 kΩ
Resistor ratio
R1/R2
0.9
1
1.1 -
AC Characteristics
Transition frequency
fT
IC = 10 mA, VCE = 5 V, f = 100 MHz
-
Collector-base capacitance
Ccb
VCB = 10 V, f = 1 MHz
1) Pulse test: t < 300µs; D < 2%
-
200 -
3-
MHz
pF
Semiconductor Group
2
Nov-26-1996
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