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Infineon Technologies AG |
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=2.2kΩ, R2=47kΩ)
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR158.../SEMB10
BCR158/F/L3
BCR158T/W
C
3
R1
R2
1
B
2
E
EHA07183
Type
BCR158
BCR158L3
BCR158F
BCR158T
BCR158W
SEMB10
SEMB10
C1 B2 E2
654
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07173
Marking
Pin Configuration
Package
WIs 1=B 2=E 3=C - - - SOT23
WI 1=B 2=E 3=C - - - TSFP-3
WIs 1=B 2=E 3=C - - - TSFP-3
WIs 1=B 2=E 3=C - - - SC75
WIs 1=B 2=E 3=C - - - SOT323
W5 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1 May-18-2004
BCR158.../SEMB10
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR158, TS ≤ 102°C
BCR158F, TS ≤ 128°C
BCR158L3, TS ≤ 135°C
BCR158T, TS ≤ 109°C
BCR158W, TS ≤ 124°C
SEMB10, TS ≤ 75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR158
BCR158F
BCR158L3
BCR158T
BCR158W
SEMB10
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
50
50
5
10
100
200
250
250
250
250
250
150
-65 ... 150
Value
≤ 240
≤ 90
≤ 60
≤ 165
≤ 105
≤ 300
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 May-18-2004
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