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Infineon Technologies AG |
NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 47kΩ)
BCR149...
BCR149F/L3
BCR149T
C
3
R1
12
BE
EHA07264
Type
BCR149F*
BCR149L3*
BCR149T*
* Preliminary
Marking
UAs 1=B
UA 1=B
UAs 1=B
Pin Configuration
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR149F, TS ≤ 128°C
BCR149L3, TS ≤ 135°C
BCR149T, TS ≤ 109°C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
1
Package
- TSFP-3
- TSLP-3-4
- SC75
Value
50
50
5
50
70
250
250
250
150
-65 ... 150
Unit
V
mA
mW
°C
Nov-04-2003
BCR149...
Thermal Resistance
Parameter
Junction - soldering point1)
BCR149F
BCR149L3
BCR149T
Symbol
RthJS
Value
≤ 90
≤ 60
≤ 165
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 50
-
-
IC = 100 µA, IB = 0
Unit
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 40 V, IE = 0
DC current gain2)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage2)
IC = 10 mA, IB = 0.5 mA
V(BR)CBO 50
-
-
V(BR)EBO 5 - -
I CBO
- - 100 nA
hFE 120 - 630 -
VCEsat - - 0.3 V
Input off voltage
IC = 100 µA, VCE = 5 V
Input on voltage
IC = 2 mA, VCE = 0.3 V
Input resistor
Vi(off)
Vi(on)
R1
0.4 - 0.8
0.5 - 1.5
32 47 62 kΩ
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 150 - MHz
Ccb - 3 - pF
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulse test: t < 300µs; D < 2%
2 Nov-04-2003
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