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Infineon Technologies AG |
NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit
driver circuit
• Built in bias resistor (R1=47kΩ, R2=47kΩ)
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR148.../SEMH2
BCR148/F/L3
BCR148T/W
C
3
R1
R2
1
B
2
E
EHA07184
Type
BCR148
BCR148F
BCR148L3
BCR148S
BCR148T
BCR148U
BCR148W
SEMH2
BCR148S/U
SEMH2
C1 B2 E2
654
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07174
Marking
Pin Configuration
Package
WEs 1=B 2=E 3=C - - - SOT23
WEs 1=B 2=E 3=C - - - TSFP-3
WE 1=B 2=E 3=C - - - TSLP-3-4
WEs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
WEs 1=B 2=E 3=C - - - SC75
WEs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
WEs 1=B 2=E 3=C - - - SOT323
WE 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1 May-17-2004
BCR148.../SEMH2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR148, TS ≤ 102°C
BCR148F, TS ≤ 128°C
BCR148L3, TS ≤ 135°C
BCR148S, TS ≤ 115°C
BCR148T, TS ≤ 109°C
BCR148U, TS ≤ 118°C
BCR148W, TS ≤ 124°C
SEMH2, TS ≤ 75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR148
BCR148F
BCR148L3
BCR148S
BCR148T
BCR148U
BCR148W
SEMH2
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
50
50
10
50
70
200
250
250
250
250
250
250
250
150
-65 ... 150
Value
≤ 240
≤ 90
≤ 60
≤ 140
≤ 165
≤ 133
≤ 105
≤ 300
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 May-17-2004
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