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Siemens Semiconductor Group |
PNP Silicon AF Power Transistor
Preliminary data
• Drain switch for RF power amplifier stages
• For AF driver and output stages
• High collector current
• Low collector-emitter saturation voltage
BCP 72M
4
5
3
2
1
VPW05980
Type
BCP 72M
Marking Ordering Code Pin Configuration
Package
PAs Q62702-C2517 1 = E 2 = C 3 = E 4 = B 5 = C SCT-595
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS ≤ 94 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient 1)
Junction - soldering point
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
RthJA
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Value
10
10
5
3
6
200
500
1.7
150
-65...+150
≤ 88
≤ 33
Unit
V
A
mA
W
°C
K/W
SSeemmicicoonndduucctotor rGGrorouupp
11
Jun1-90958--11919-081
BCP 72M
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 100 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 8 V, IE = 0
Collector cutoff current
VCB = 8 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)
IC = 10 mA, VCE = 5 V
IC = 500 mA, VCE = 1 V
IC = 2 A, VCE = 2 V
V(BR)CEO 10
V(BR)CBO 10
V(BR)EBO 5
ICBO
-
ICBO
-
IEBO
-
hFE
25
85
50
- -V
--
--
- 100 nA
- 20 µA
- 100 nA
-
--
- 475
--
Collector-emitter saturation voltage1)
IC = 2 A, IB = 0.2 A
Base-emitter saturation voltage 1)
IC = 2 A, IB = 0.2 A
VCEsat
VBEsat
- 0.15 - V
- - 1.2
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 100 - MHz
Ccb - 100 - pF
1) Pulse test: t < 300µs; D < 2%
SSeemmicicoonndduucctotor rGGrorouupp
22
Jun1-90958--11919-081
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