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Siemens Semiconductor Group |
NPN Silicon AF Transistor
q For general AF application
q High collector current
q High current gain
q Low collector-emitter saturation voltage
q Complementary type: BCP 69 (PNP)
BCP 68
Type
BCP 68
BCP 68-10
BCP 68-16
BCP 68-25
Marking
BCP 68
BCP 68-10
BCP 68-16
BCP 68-25
Ordering Code
(tape and reel)
Q62702-C2126
Q62702-C2127
Q62702-C2128
Q62702-C2129
Pin Configuration
1234
BCEC
Package1)
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 124 ˚C2)
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Symbol
VCE0
VCES
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Values
Unit
20 V
25
25
5
1A
2
100 mA
200
1.5 W
150 ˚C
– 65 … + 150
Rth JA
Rth JS
≤ 72
≤ 17
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
01.97
BCP 68
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 30 mA, IB = 0
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IB = 0
Collector-base cutoff current
VCB = 25 V
VCB = 25 V, TA = 150 ˚C
Emitter-base cutoff current
VEB = 5 V, IC = 0
DC current gain1)
IC = 5 mA, VCE = 10 V
IC = 500 mA, VCE = 1 V
IC = 1 A, VCE = 1 V
BCP 68
BCP 68-10
BCP 68-16
BCP 68-25
Collector-emitter saturation voltage1)
IC = 1 A, IB = 100 mA
Base-emitter voltage1)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
AC characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 20
–
–
V
V(BR)CES 25
–
–
V(BR)CB0 25
–
–
V(BR)EB0 5 – –
ICB0
– – 100 nA
– – 100 µA
IEB0 – – 100 nA
hFE
VCEsat
–
50 –
–
85 –
375
85 100 160
100 160 250
160 250 375
60 –
–
– – 0.5 V
VBE
– 0.6 –
––1
fT – 100 – MHz
1) Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
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