|
Diotec Semiconductor |
BCP 54, BCP 55, BCP 56
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
6.5±0.2
3±0.1
4
1.65
1 0.7
2.3
23
3.25
Dimensions / Maße in mm
1 = B 2, 4 = C 3 = E
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.3 W
SOT-223
0.04 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Collector current – Koll.-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
VCE0
VCB0
VEB0
Ptot
IC
ICM
IBM
Tj
TS
Grenzwerte (TA = 25/C)
BCP 54 BCP 55 BCP 56
45 V
60 V
80 V
45 V
60 V
100 V
5V
1.3 W 1)
1A
1.5 A
200 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 30 V
IE = 0, VCB = 30 V, Tj = 125/C
Emitter-Base cutoff current – Emitterreststrom
ICB0
ICB0
IC = 0, VEB = 5 V
IEB0
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
IC = 500 mA, IB = 50 mA
VCEsat
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 100 nA
– – 10 :A
– – 100 nA
– – 500 mV
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
26 01.11.2003
General Purpose Transistors
BCP 54, BCP 55, BCP 56
Characteristics (Tj = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis 1)
BCP 5x-6 hFE
VCE = 2 V, IC = 150 mA
BCP 5x-10 hFE
BCP 5x-16 hFE
VCE = 2 V, IC = 5 mA
VCE = 2 V, IC = 500 mA
BCP 54... hFE
BCP56 hFE
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 2 V, IC = 500 mA
Gain-Bandwidth Product – Transitfrequenz
VBEon
VCE = 5 V, IC = 10 mA, f = 100 MHz
DC current gain ratio of the complement. pairs
Verhältnis der Stromverst. complement. Paare
fT
'hFE1 hFE2
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
junction to soldering point – Sperrschicht zu Lötpad
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
40 – 100
63 – 160
100 – 250
63 –
–
40 –
–
– – 1V
– 130 MHz –
– – 1.6
RthA 95 K/W 2)
RthS 14 K/W
BCP 51, BCP 52, BCP 53
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
27
|