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BCP53M 반도체 회로 부품 판매점

PNP Silicon AF Transistor (For AF driver and output stages High collector current)



Siemens Semiconductor Group 로고
Siemens Semiconductor Group
BCP53M 데이터시트, 핀배열, 회로
PNP Silicon AF Transistor
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP 54M...BCP 56M(NPN)
BCP 51M ... BCP 53M
4
5
3
2
1
VPW05980
Type
BCP 51M
BCP 52M
BCP 53M
Marking Ordering Code Pin Configuration
AAs Q62702-C2592 1 = B 2 = C 3 = E
AEs Q62702-C2593
AHs Q62702-C2594
4 n.c.
5=C
Package
SCT-595
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS 77 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient 1)
Junction - soldering point
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BCP 51M BCP 52M BCP 53M Unit
45 60 80 V
45 60 100
5 55
1 mA
1.5 A
100 mA
200
1.7 W
150 °C
-65...+150
RthJA
RthJS
98 K/W
43
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
SSeemmicioconndduuctcotor rGGrorouupp
11
Au 1-19918-1-1919-081


BCP53M 데이터시트, 핀배열, 회로
BCP 51M ... BCP 53M
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCP 51M
BCP 52M
V(BR)CEO
45
60
-
-
V
-
-
BCP 53M
80 -
-
Collector-base breakdown voltage
IC = 100 µA, IB = 0
BCP 51M
BCP 52M
BCP 53M
V(BR)CBO
45
60
100
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
IC = 5 mA, VCE = 2 V
DC current gain 1)
IC = 150 mA, VCE = 2 V
DC current gain 1)
IC = 500 mA, VCE = 2 V
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
Base-emitter voltage 1)
IC = 500 mA, VCE = 2 V
V(BR)EBO 5
ICBO
-
ICBO
-
hFE 25
hFE 40
hFE 25
VCEsat
-
VBE(ON)
-
--
- 100 nA
- 20 µA
- --
- 250
--
- 0.5 V
-1
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
fT - 100 - MHz
1) Pulse test: t 300µs, D = 2%
SSeemmicioconndduuctcotor rGGrorouupp
22
Au 1-19918-1-1919-081




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제조업체: Siemens Semiconductor Group

( siemens )

BCP53M transistor

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