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PDF BFQ82 Data sheet ( Hoja de datos )
| Número de pieza | BFQ82 | |
| Descripción | NPN Silicon RF Transistor (For low-noise/ high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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NPN Silicon RF Transistor
q For low-noise, high-gain amplifiers up to 2 GHz.
q Linear broadband applications at collector currents
up to 40 mA.
q Hermetically sealed ceramic package.
q fT = 8 GHz
F = 1.1 dB at 800 MHz
BFQ 82
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFQ 82
Marking
82
Ordering Code
(tape and reel)
Q62702-F1189
Pin Configuration
1 2 34
B ECE
Package1)
Cerec-X
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage, VBE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f ≥ 10 MHz
Base current
Peak base current, f ≥ 10 MHz
Total power dissipation, TS ≤ 95 ˚C3)
Junction temperature
Ambient temperature range
Storage temperature range
Symbol
VCE0
VCES
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
TA
Tstg
Values
Unit
12 V
20
20
2
80 mA
80
10
10
500 mW
175 ˚C
– 65 … + 175
– 65 … + 175
Thermal Resistance
Junction - ambient2)
Junction - case3)
Rth JA
Rth JS
≤ 240
≤ 160
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.
1 page  
BFQ 82
Common Emitter Noise Parameters
f
Fmin
Gp(Fmin)
Γopt
RN N
F50 Ω G p( F50 Ω)
GHz
dB
dB
MAG ANG Ω
–
dB dB
IC = 10 mA, VCE = 8 V, Z0 = 50 Ω
0.01 1
–
(ZS = 75 Ω)
–
–
1.05 –
0.8 1.15 15.7 – – – – 1.35 14.7
2.0 2.3 9.5 – – – – 2.8 7.5
IC = 30 mA, VCE = 8 V, Z0 = 50 Ω
0.01 1.65 –
(ZS = 50 Ω)
–
–
1.65 –
0.8 1.6 17
–
–
–
– 1.95 15.8
2.0 2.6 10
–
–
–
– 3.3 8
Noise figure F = f (IC)
VCE = 8 V, f = 10 MHz
5 Page 
BFQ 82
Common Emitter S Parameters (continued)
f
GHz
S11
MAG
ANG
S21
MAG
ANG
IC = 10 mA, VCE = 5 V, Z0 = 50 Ω
0.10 0.670 – 68.9 23.03
0.15 0.664 – 92.4 19.59
0.20 0.661 – 109.9 16.65
0.25 0.660 – 122.6 14.30
0.30 0.660 – 132.6 12.45
0.40 0.658 – 147.1 9.79
0.50 0.660 – 157.1 8.04
0.60 0.662 – 164.9 6.80
0.70 0.664 – 171.0 5.88
0.80 0.669 – 176.3 5.17
0.90 0.672
179.2 4.62
1.00 0.675
175.0 4.16
1.20 0.682
167.4 3.48
1.40 0.687
160.9 3.00
1.50 0.684
158.2 2.82
1.60 0.684
155.1 2.65
1.80 0.693
149.8 2.37
2.00 0.701
144.9 2.13
2.50 0.732
134.5 1.73
3.00 0.735
122.0 1.47
143.5
131.0
121.7
114.5
108.9
100.3
93.9
88.6
83.9
79.8
76.0
72.5
66.2
60.5
57.7
54.7
48.8
43.6
32.6
19.2
S12
MAG
0.028
0.037
0.042
0.045
0.048
0.052
0.055
0.058
0.061
0.064
0.067
0.070
0.076
0.084
0.088
0.092
0.101
0.108
0.132
0.156
ANG
60.6
51.4
45.5
41.6
39.1
36.6
35.8
36.1
36.8
37.4
38.4
39.2
40.8
41.9
42.5
42.6
42.6
42.2
41.4
37.4
S22
MAG
ANG
0.822
0.705
0.604
0.525
0.462
0.376
0.319
0.283
0.256
0.237
0.222
0.209
0.191
0.182
0.181
0.180
0.181
0.179
0.188
0.215
– 32.5
– 43.2
– 51.1
– 56.7
– 60.9
– 66.9
– 70.8
– 73.9
– 76.4
– 78.5
– 80.8
– 83.1
– 87.2
– 91.0
– 93.2
– 95.5
– 101.1
– 107.6
– 124.6
– 139.6
S11, S22 = f (f)
IC = 10 mA, VCE = 5 V, Z0 = 50 Ω
S12, S21 = f (f)
IC = 10 mA, VCE = 5 V, Z0 = 50 Ω
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet BFQ82.PDF ] | |
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