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PDF BFQ81 Data sheet ( Hoja de datos )
| Número de pieza | BFQ81 | |
| Descripción | NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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NPN Silicon RF Transistor
• For low-noise amplifiers up to 2GHz
and broadband analog and digital
applications in telecommunications systems at
collector currents from 0.5 mA to 20 mA.
BFQ 81
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFQ 81 RAs
Q62702-F1049
1=B
2=E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 59 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
16
25
25
2
30
4
280
150
- 65 ... + 150
- 65 ... + 150
≤ 325
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-12-1996
1 page  
BFQ 81
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
300
mW
260
Ptot 240
220
200
180
160
140
120
100
80
60
40
20
0
0
TS
TA
20 40 60 80 100 120 °C 150
TA,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3 10 2
RthJS K/W
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
Ptotmax/Ptot-DC
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Semiconductor Group
5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Dec-12-1996
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BFQ81.PDF ] | |
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