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Número de pieza | BFQ74 | |
Descripción | NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range/ and broadband analog and digital applications) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFQ74 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! NPN Silicon RF Transistor
q For low-noise amplifiers in the GHz range,
and broadband analog and digital applications
in telecommunications systems at collector
currents from 1 mA to 25 mA.
q Hermetically sealed ceramic package.
q HiRel/Mil screening available.
BFQ 74
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFQ 74
Marking
74
Ordering Code
(tape and reel)
Q62702-F788
Pin Configuration
1 2 34
B ECE
Package1)
Cerec-X
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage, VBE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f ≥ 10 MHz
Base current
Total power dissipation, TS ≤ 115 ˚C3)
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point3)
Symbol
VCE0
VCES
VCB0
VEB0
IC
ICM
IB
Ptot
Tj
TA
Tstg
Values
Unit
16 V
25
25
2
35 mA
45
5
300 mW
175 ˚C
– 65 … + 175
– 65 … + 175
Rth JA
Rth JS
≤ 280
≤ 200
K/W
1) For detailed dimensions see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.
1 page BBFFQQ 7744
Common Emitter Noise Parameters
f
Fmin
Gp(Fmin)
Γopt
GHz
dB
dB
MAG ANG
IC = 3 mA, VCE = 10 V, Z0 = 50 Ω
0.01 0.7
–
(ZS = 150 Ω)
IC = 10 mA, VCE = 10 V, Z0 = 50 Ω
0.01 1.05 –
(ZS = 75 Ω)
0.8 1.3 17.5 0.22 82
2.0 2.5 11.5 0.20 137
RN
Ω
–
–
11.5
23.5
N
–
–
–
0.20
0.60
F50 Ω
dB
1.2
1.2
1.4
2.7
G p(F50Ω)
dB
–
–
16.8
10
Noise figure F = f (IC)
VCE = 10 V, f = 10 MHz
5 Page BBFFQQ 7744
Common Emitter S Parameters (continued)
f
GHz
S11
MAG
ANG
S21
MAG
ANG
IC = 10 mA, VCE = 10 V, Z0 = 50 Ω
0.1 0.83 – 35 22.64
0.2 0.71 – 65 18.55
0.3 0.63 – 89 14.98
0.4 0.58 – 105 12.22
0.6 0.55 – 130 8.96
0.8 0.52 – 148 6.91
1.0 0.53 – 161 5.64
1.2 0.52 – 171 4.76
1.5 0.52
176 3.87
1.8 0.53
167 3.25
2.0 0.55
161 2.95
2.5 0.57
148 2.41
3.0 0.60
135 2.06
3.5 0.62
125 1.82
4.0 0.63
112 1.62
4.5 0.67
103 1.46
5.0 0.67
92 1.32
155
134
121
112
98
89
81
75
65
57
52
40
29
18
6
–5
– 15
S12
MAG
ANG
0.015
0.026
0.034
0.039
0.047
0.053
0.058
0.064
0.072
0.083
0.089
0.107
0.127
0.148
0.173
0.194
0.217
70
59
53
48
46
44
45
45
46
46
47
46
43
41
36
32
25
S22
MAG
0.92
0.80
0.70
0.63
0.54
0.49
0.46
0.44
0.43
0.42
0.41
0.39
0.38
0.37
0.37
0.37
0.38
ANG
– 13
– 23
– 27
– 30
– 32
– 34
– 35
– 37
– 40
– 44
– 47
– 56
– 67
– 78
– 92
– 106
– 123
S11, S22 = f (f)
IC = 10 mA, VCE = 10 V, Z0 = 50 Ω
S12, S21 = f (f)
IC = 10 mA, VCE = 10 V, Z0 = 50 Ω
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet BFQ74.PDF ] |
Número de pieza | Descripción | Fabricantes |
BFQ70 | NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) | Siemens Semiconductor Group |
BFQ71 | NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.) | Siemens Semiconductor Group |
BFQ72 | NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.) | Siemens Semiconductor Group |
BFQ73 | NPN SILICON RF TRANSISTOR (FOR LOW-NOISE/ LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz) | Siemens Semiconductor Group |
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