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Número de pieza | BFQ71 | |
Descripción | NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFQ71 (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
No Preview Available ! NPN Silicon RF Transistor
q For broadband amplifiers up to 2 GHz and fast
non-saturated switches at collector currents from
1 mA to 20 mA.
q Hermetically sealed ceramic package.
q HiRel/Mil screening available.
q CECC-type available: CECC 50002/260.
BFQ 71
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFQ 71
Marking
71
Ordering Code
(tape and reel)
Q62702-F775
Pin Configuration
1 2 34
B ECE
Package1)
Cerec-X
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage, VBE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS ≤ 103 ˚C3)
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point3)
Symbol
VCE0
VCES
VCB0
VEB0
IC
IB
Ptot
Tj
TA
Tstg
Values
Unit
15 V
20
20
2.5
30 mA
4
300 mW
175 ˚C
– 65 … + 175
– 65 … + 175
Rth JA
Rth JS
≤ 320
≤ 240
K/W
1) For detailed dimensions see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.
1 page BFQ 71
Common Emitter Noise Parameters
f
Fmin
Gp(Fmin)
Γopt
GHz
dB
dB
MAG ANG
RN
Ω
IC = 2 mA, VCE = 6 V, Z0 = 50 Ω
0.01 1.1
–
(ZS = 150 Ω)
–
IC = 5 mA, VCE = 10 V, Z0 = 50 Ω
0.01 1.3
0.8 1.6
2.0 3.1
–
15.3
9
(ZS = 100 Ω)
0.29 56
0.12 124.5
–
18.5
30
N
–
–
–
0.24
0.67
F50 Ω
dB
G p(F50Ω)
dB
1.6 –
1.7 –
1.8 14.8
––
Noise figure F = f (ZS)
VCE = 6 V, f = 10 MHz
5 Page BFQ 71
Common Emitter S Parameters (continued)
f
GHz
S11
MAG
ANG
S21
MAG
ANG
IC = 10 mA, VCE = 6 V, Z0 = 50 Ω
0.1 0.68 – 47 22.06
0.2 0.60 – 85 17.31
0.3 0.55 – 111 13.39
0.4 0.55 – 128 10.84
0.6 0.53 – 150 7.60
0.8 0.53 – 164 5.80
1.0 0.53 – 174 4.67
1.2 0.53
178 3.95
1.5 0.53
168 3.19
1.8 0.54
160 2.67
2.0 0.56
155 2.42
2.5 0.58
143 1.99
3.0 0.60
132 1.69
152
130
116
106
93
83
76
70
60
52
47
34
23
S12
MAG
ANG
0.020
0.032
0.040
0.045
0.053
0.061
0.069
0.078
0.091
0.106
0.114
0.138
0.163
70
56
49
46
46
46
47
48
48
47
46
43
38
S22
MAG
0.90
0.73
0.59
0.51
0.41
0.37
0.34
0.32
0.31
0.31
0.30
0.28
0.28
ANG
– 20
– 33
– 39
– 42
– 44
– 46
– 47
– 49
– 53
– 59
– 63
– 76
– 91
S11, S22 = f (f)
IC = 10 mA, VCE = 6 V, Z0 = 50 Ω
S12, S21 = f (f)
IC = 10 mA, VCE = 6 V, Z0 = 50 Ω
11 Page |
Páginas | Total 18 Páginas | |
PDF Descargar | [ Datasheet BFQ71.PDF ] |
Número de pieza | Descripción | Fabricantes |
BFQ70 | NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) | Siemens Semiconductor Group |
BFQ71 | NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.) | Siemens Semiconductor Group |
BFQ72 | NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.) | Siemens Semiconductor Group |
BFQ73 | NPN SILICON RF TRANSISTOR (FOR LOW-NOISE/ LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz) | Siemens Semiconductor Group |
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