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PDF BFQ70 Data sheet ( Hoja de datos )
| Número de pieza | BFQ70 | |
| Descripción | NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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NPN Silicon RF Transistor
q For low-noise IF and broadband amplifiers in
antenna and telecommunications systems at
collector currents from 2 mA to 20 mA.
q Hermetically sealed ceramic package
q HiRel/Mil screening available.
BFQ 70
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFQ 70
Marking
70
Ordering Code
(tape and reel)
Q62702-F774
Pin Configuration
1 2 34
B ECE
Package1)
Cerex-X
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage, VBE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS ≤ 121 ˚C3)
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point3)
Symbol
VCE0
VCES
VCB0
VEB0
IC
IB
Ptot
Tj
TA
Tstg
Values
Unit
15 V
20
20
2.5
35 mA
4
300 mW
175 ˚C
– 65 … + 175
– 65 … + 175
Rth JA
Rth JS
≤ 260
≤ 180
K/W
1) For detailed dimensions see chapter Package Outlines.
2) Package mounted on alumina 16 mm × 25 mm × 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.
1 page  
BFQ 70
Common Emitter Noise Parameters
f
GHz
Fmin
dB
Gp(Fmin)
Γopt
dB MAG ANG
IC = 3 mA, VCE = 6 V, Z0 = 50 Ω
0.01 0.8
–
(ZS = 150 Ω)
IC = 5 mA, VCE = 6 V, Z0 = 50 Ω
0.01 0.85 –
(ZS = 100 Ω)
0.8 1.3 15.5 0.28 79
RN
Ω
–
–
12
N
F50 Ω
G p(F50Ω)
– dB dB
– 1.2 –
– 1.1
0.19 1.5
–
14.8
Noise figure F = f (ZS)
VCE = 6 V, f = 10 MHz
5 Page 
BFQ 70
Common Emitter S Parameters (continued)
f
GHz
S11
MAG
ANG
S21
MAG
ANG
IC = 10 mA, VCE = 6 V, Z0 = 50 Ω
0.1 0.73 – 50 22.77
0.2 0.67 – 89 17.57
0.3 0.63 – 114 13.44
0.4 0.62 – 132 10.84
0.6 0.60 – 153 7.56
0.8 0.60 – 167 5.75
1.0 0.61 – 177 4.62
1.2 0.61
175 3.90
1.5 0.61
165 3.15
1.8 0.62
157 2.62
2.0 0.64
152 2.37
2.5 0.65
141 1.94
3.0 0.68
130 1.65
151
129
115
105
92
83
76
70
60
52
47
35
24
S12
MAG
ANG
0.021
0.034
0.041
0.045
0.051
0.057
0.062
0.068
0.078
0.089
0.096
0.117
0.138
65
52
43
41
39
40
41
43
44
44
44
44
41
S22
MAG
0.89
0.71
0.57
0.49
0.39
0.35
0.32
0.30
0.29
0.28
0.27
0.25
0.25
ANG
– 21
– 34
– 41
– 44
– 45
– 46
– 47
– 48
– 51
– 56
– 61
– 73
– 88
S11, S22 = f (f)
IC = 10 mA, VCE = 6 V, Z0 = 50 Ω
S12, S21 = f (f)
IC = 10 mA, VCE = 6 V, Z0 = 50 Ω
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BFQ70.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BFQ70 | NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) | Siemens Semiconductor Group |
| BFQ71 | NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.) | Siemens Semiconductor Group |
| BFQ72 | NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.) | Siemens Semiconductor Group |
| BFQ73 | NPN SILICON RF TRANSISTOR (FOR LOW-NOISE/ LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz) | Siemens Semiconductor Group |
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