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BFQ270 반도체 회로 부품 판매점

NPN 6 GHz wideband transistor



NXP Semiconductors 로고
NXP Semiconductors
BFQ270 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ270
NPN 6 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995


BFQ270 데이터시트, 핀배열, 회로
Philips Semiconductors
NPN 6 GHz wideband transistor
Product specification
BFQ270
FEATURES
High power gain
Emitter-ballasting resistors for
good thermal stability
Gold metallization ensures
excellent reliability.
DESCRIPTION
Silicon NPN transistor mounted in a
4-lead dual-emitter SOT172A1.
envelope with a ceramic cap. All
leads are isolated from the mounting
base.
It is primarily intended for use in
MATV and CATV amplifiers.
PINNING
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
page
4
3
1
Top view
2
MBC869
Fig.1 SOT172A1.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
GUM
maximum unilateral power gain
VO output voltage
CONDITIONS
open emitter
open base
up to Tc = 100 °C
IC = 240 mA; VCE = 18 V; Tj = 25 °C
IC = 240 mA; VCE = 18 V; f = 1 GHz;
Tamb = 25 °C
IC = 240 mA; VCE = 18 V;
f = 800 MHz; Tamb = 25 °C
dim = 60 dB; IC = 240 mA;
VCE = 18 V; RL = 75 ;
f(p+q-r) = 793.25 MHz
MIN. TYP. MAX. UNIT
−−
−−
−−
−−
60
6
25 V
19 V
500 mA
10 W
GHz
10
dB
1.6
V
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1995
2




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BFQ270 transistor

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BFQ270

NPN 6 GHz wideband transistor - NXP Semiconductors