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Número de pieza | BFQ19S | |
Descripción | Low Noise Silicon Bipolar RF Transistor | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFQ19S (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Low Noise Silicon Bipolar RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
1
2
3
BFQ19S
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFQ19S
Marking
Pin Configuration
FG
1=B
2=C
3=E
Package
SOT89
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 85°C
Junction temperature
Ambient temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TA
15
20
20
3
120
12
1
150
-65 ... 150
Storage temperature
TStg -65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
65
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
W
°C
Unit
K/W
1 2014-04-03
1 page BFQ19S
SPICE GP model
For the SPICE model as well as for S-parameters (including noise parameters)
please refer to our internet website www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design.
5 2014-04-03
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet BFQ19S.PDF ] |
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