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NXP Semiconductors |
BFQ19
NPN 5 GHz wideband transistor
Rev. 03 — 28 September 2007
Product data sheet
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NXP Semiconductors
NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFQ19
DESCRIPTION
NPN transistor in a SOT89 plastic
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for use in UHF and
microwave amplifiers such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analysers
etc.
The transistor features very low
intermodulation distortion and high
power gain. Due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
PINNING
PIN DESCRIPTION
Code: FB
1 emitter
2 collector
3 base
321
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
Ptot
fT
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
Cre feedback capacitance
F noise figure
CONDITIONS
TYP.
open base
−
up to Ts = 145 °C (note 1)
Ic = 50 mA; VCE = 10 V; f = 500 MHz;
Tj = 25 °C
Ic = 10 mA; VCE = 10 V; f = 1 MHz;
Tamb = 25 °C
Ic = 50 mA; VCE = 10 V; Zs = opt.;
f = 500 MHz; Tamb = 25 °C
−
−
5.5
1.3
3.3
MAX.
15
100
1
−
−
−
UNIT
V
mA
W
GHz
pF
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
f > 1 MHz
up to Ts = 145 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
−
−
−65
−
MAX. UNIT
20 V
15 V
3.3 V
100 mA
150 mA
1W
150 °C
175 °C
Rev. 03 - 28 September 2007
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