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BFP620 반도체 회로 부품 판매점

NPN Silicon Germanium RF Transistor



Infineon Technologies AG 로고
Infineon Technologies AG
BFP620 데이터시트, 핀배열, 회로
Low Noise SiGe:C Bipolar RF Transistor
Highly linear low noise RF transistor
Provides outstanding performance
for a wide range of wireless applications
Based on Infineon's reliable high volume
Silicon Germanium technology
Ideal for CDMA and WLAN applications
Collector design provides high linearity of
14.5 dBm OP1dB for low voltage application
Maximum stable gain
Gms = 21.5 dB at 1.8 GHz
Gma = 11 dB at 6 GHz
Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz
Outstanding noise figure NFmin = 1.3 dB at 6 GHz
Accurate SPICE GP model enables effective
design in process
Pb-free (RoHS compliant) and halogen-free package
with visible leads
Qualification report according to AEC-Q101 available
3
4
BFP620
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP620
Marking
Pin Configuration
R2s 1=B 2=E 3=C 4=E -
-
Package
SOT343
1 2013-09-13


BFP620 데이터시트, 핀배열, 회로
BFP620
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
TA = 25 °C
TA = -55 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS 95°C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TA
TStg
Value
2.3
2.1
7.5
7.5
1.2
80
3
185
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Junction - soldering point2)
Symbol
RthJS
Value
300
Unit
K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 7.5 V, VBE = 0
VCE = 5 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
IC = 50 mA, VCE = 1.5 V, pulse measured
V(BR)CEO 2.3
2.8
-V
ICES
ICBO
µA
- - 10
- 0.001 0.04
- 1 40 nA
IEBO
- 10 900
hFE 110 180 270 -
1TS is measured on the emitter lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
2 2013-09-13




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제조업체: Infineon Technologies AG

( infineon )

BFP620 transistor

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