|
Infineon Technologies AG |
NPN Silicon RF Transistor
BFP540F
• For highest gain low noise amplifier
at 1.8 GHz
• Outstanding Gms = 20 dB
Noise Figure F = 0.9 dB
• Gold metallization for high reliability
• SIEGET 45 - Line
3
4
TSFP-4
2
1
to p v ie w
43
ATs
12
d ir e c tio n o f u n r e e lin g
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP540F
Marking
Pin Configuration
ATs* 1=B 2=E 3=C 4=E -
-
Package
TSFP-4
* Pin configuration fixed relative to marking (see package picture)
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1) TS ≤ 80°C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
Value
4.5
14
14
1
80
8
250
150
-65 ... 150
-65 ... 150
Value
≤ 280
Unit
V
mA
mW
°C
Unit
K/W
1 Jan-28-2004
BFP540F
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 14 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
IC = 20 mA, VCE = 3.5 V
V(BR)CEO 4.5
5
-V
ICES
- - 10 µA
ICBO
- - 100 nA
IEBO
- - 10 µA
hFE 50 110 200 -
2 Jan-28-2004
|