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BFP520 반도체 회로 부품 판매점

Low Noise Silicon Bipolar RF Transistor



Infineon Technologies AG 로고
Infineon Technologies AG
BFP520 데이터시트, 핀배열, 회로
Low Noise Silicon Bipolar RF Transistor
Low noise amplifier designed for low voltage
applications, ideal for 1.2 V or 1.8 V supply voltage
Common e.g. in cordless phones, satellite
receivers and oscillators up to 22 GHz
High gain and low noise at high frequencies
due to high transit frequency fT = 45 GHz
Easy to use Pb-free (RoHS compliant) and
halogen free industry standard package with
visible leads
Qualification report according to AEC-Q101
available
BFP520
3
4
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP520
Marking
Pin Configuration
APs 1=B 2=E 3=C 4=E -
-
Package
SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
TA = 25 °C
TA = -55 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS 105 °C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
1TS is measured on the emitter lead at the soldering point to pcb
Value
2.5
2.4
10
10
1
50
5
125
150
-55 ... 150
Unit
V
mA
mW
°C
1 2015-10-12


BFP520 데이터시트, 핀배열, 회로
BFP520
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
450
Unit
K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 2 V, VBE = 0
VCE = 10 V, VBE = 0
Collector-base cutoff current
VCB = 2 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
IC = 20 mA, VCE = 2 V, pulse measured
V(BR)CEO 2.5 3 3.5 V
ICES
ICBO
nA
- 1 30
- - 1000
- - 30
IEBO
- 100 3000
hFE 70 110 170 -
1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
2 2015-10-12




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BFP520 transistor

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