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Vishay Telefunken |
Silicon NPN Planar RF Transistor
BFG93A
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range.
Features
D High power gain
D Low noise figure
D High transition frequency
21
94 9279
13 579
34
BFG93A Marking: R8
Plastic case (SOT 143)
1 = Collector, 2 = Base, 3 = Emitter, 4 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb ≤ 60 °C
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
20
12
2
50
200
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthJA
Value
450
Unit
K/W
Document Number 85076
Rev. 1, 11-Nov-99
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
BFG93A
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 20 V, VBE = 0
Collector-base cut-off current
VCB = 15 V, IE = 0
Emitter-base cut-off current
VEB = 2 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA
DC forward current transfer ratio VCE = 5 V, IC = 30 mA
Symbol Min Typ Max Unit
ICES
100 mA
ICBO
IEBO
100 nA
10 mA
V(BR)CEO 12
V
VCEsat
0.1 0.4 V
hFE 40 90 150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage – two
tone intermodulation test
Third order intercept point
Test Conditions
VCE = 5 V, IC = 30 mA, f = 500 MHz
VCB = 10 V, f = 1 MHz
VCE = 10 V, f = 1 MHz
WVEB = 0.5 V, f = 1 MHz
VCE = 8 V, ZS = 50 ,
Wf = 800 MHz, IC = 5 mA
VCE = 8 V, ZS = 50 ,
Wf = 800 MHz, IC = 25 mA
VCE = 8 V, ZS = 50 ,
WZL = ZLopt, IC = 25 mA, f = 800 MHz
VCE = 8 V, ZS = 50 ,
ZL = ZLopt, IC = 25 mA, f = 2 GHz
VCE = 8 V, IC = 25 mA, dIM = 60 dB,
Wf1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50
VCE = 8 V, IC = 25 mA, f = 800 MHz
Symbol Min Typ Max Unit
fT 6 GHz
Ccb 0.45 pF
Cce 0.2 pF
Ceb 1.25 pF
F 1.6 dB
F 2.1 dB
Gpe 16 dB
Gpe 9 dB
V1 = V2 260 mV
IP3 31 dBm
www.vishay.de • FaxBack +1-408-970-5600
2 (4)
Document Number 85076
Rev. 1, 11-Nov-99
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