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BFG93A 반도체 회로 부품 판매점

Silicon NPN Planar RF Transistor



Vishay Telefunken 로고
Vishay Telefunken
BFG93A 데이터시트, 핀배열, 회로
Silicon NPN Planar RF Transistor
BFG93A
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range.
Features
D High power gain
D Low noise figure
D High transition frequency
21
94 9279
13 579
34
BFG93A Marking: R8
Plastic case (SOT 143)
1 = Collector, 2 = Base, 3 = Emitter, 4 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb 60 °C
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
20
12
2
50
200
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthJA
Value
450
Unit
K/W
Document Number 85076
Rev. 1, 11-Nov-99
www.vishay.de FaxBack +1-408-970-5600
1 (4)


BFG93A 데이터시트, 핀배열, 회로
BFG93A
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 20 V, VBE = 0
Collector-base cut-off current
VCB = 15 V, IE = 0
Emitter-base cut-off current
VEB = 2 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA
DC forward current transfer ratio VCE = 5 V, IC = 30 mA
Symbol Min Typ Max Unit
ICES
100 mA
ICBO
IEBO
100 nA
10 mA
V(BR)CEO 12
V
VCEsat
0.1 0.4 V
hFE 40 90 150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage – two
tone intermodulation test
Third order intercept point
Test Conditions
VCE = 5 V, IC = 30 mA, f = 500 MHz
VCB = 10 V, f = 1 MHz
VCE = 10 V, f = 1 MHz
WVEB = 0.5 V, f = 1 MHz
VCE = 8 V, ZS = 50 ,
Wf = 800 MHz, IC = 5 mA
VCE = 8 V, ZS = 50 ,
Wf = 800 MHz, IC = 25 mA
VCE = 8 V, ZS = 50 ,
WZL = ZLopt, IC = 25 mA, f = 800 MHz
VCE = 8 V, ZS = 50 ,
ZL = ZLopt, IC = 25 mA, f = 2 GHz
VCE = 8 V, IC = 25 mA, dIM = 60 dB,
Wf1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50
VCE = 8 V, IC = 25 mA, f = 800 MHz
Symbol Min Typ Max Unit
fT 6 GHz
Ccb 0.45 pF
Cce 0.2 pF
Ceb 1.25 pF
F 1.6 dB
F 2.1 dB
Gpe 16 dB
Gpe 9 dB
V1 = V2 260 mV
IP3 31 dBm
www.vishay.de FaxBack +1-408-970-5600
2 (4)
Document Number 85076
Rev. 1, 11-Nov-99




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BFG93A transistor

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