파트넘버.co.kr BFG93 데이터시트 PDF


BFG93 반도체 회로 부품 판매점

NPN 6 GHz wideband transistors



NXP Semiconductors 로고
NXP Semiconductors
BFG93 데이터시트, 핀배열, 회로
DATA SHEET
book, halfpage
M3D071
BFG93A; BFG93A/X
NPN 6 GHz wideband transistors
Product specification
Supersedes data of 1995 Sep 25
1998 Sep 23


BFG93 데이터시트, 핀배열, 회로
Philips Semiconductors
NPN 6 GHz wideband transistors
Product specification
BFG93A; BFG93A/X
FEATURES
High power gain
Low noise figure
Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the UHF
and microwave range.
DESCRIPTION
NPN transistor in a 4-pin, dual-emitter
SOT143B plastic package.
PINNING
PIN DESCRIPTION
BFG93A
1 collector
2 base
3 emitter
4 emitter
BFG93A/X
1 collector
2 emitter
3 base
4 emitter
handbook, 2 c4olumns
3
1
Top view
2
MSB014
Fig.1 SOT143B.
MARKING
TYPE NUMBER
BFG93A
BFG93A/X
CODE
R8
V15
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
Cre
fT
GUM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral
power gain
F noise figure
CONDITIONS
open emitter
open base
Ts 85 °C
IC = ic = 0; VCB = 5 V; f = 1 MHz
IC = 30 mA; VCE = 5 V; f = 500 MHz
IC = 30 mA; VCE = 8 V; Tamb = 25 °C;
f = 1 GHz
IC = 30 mA; VCE = 8 V; Tamb = 25 °C;
f = 2 GHz
Γs = Γopt; IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
MIN.
4.5
TYP.
0.6
6
16
MAX. UNIT
15 V
12 V
35 mA
300 mW
pF
GHz
dB
10 dB
1.7 dB
1998 Sep 23
2




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BFG93 transistor

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