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BFG67W 반도체 회로 부품 판매점

NPN 8 GHz wideband transistor



NXP Semiconductors 로고
NXP Semiconductors
BFG67W 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
August 1995
Philips Semiconductors


BFG67W 데이터시트, 핀배열, 회로
Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG67W
BFG67W/X; BFG67W/XR
FEATURES
High power gain
Low noise figure
Gold metallization ensures
excellent reliability.
MARKING
TYPE NUMBER
BFG67W
BFG67W/X
BFG67W/XR
CODE
V2
V6
V7
APPLICATIONS
They are intended for wideband
applications in the GHz range such as
analog satellite television systems
and portable RF communication
equipment.
DESCRIPTION
NPN silicon planar epitaxial
transistors in plastic, 4-pin
dual-emitter SOT343 and SOT343R
packages.
PINNING
PIN DESCRIPTION
BFG67W (see Fig.1)
1 collector
2 base
3 emitter
4 emitter
BFG67W/X (see Fig.1)
1 collector
2 emitter
3 base
4 emitter
BFG67W/XR (see Fig.2)
1 collector
2 emitter
3 base
4 emitter
fpage
4
3
1
Top view
2
MBK523
Fig.1 SOT343.
alfpage
3
4
2
Top view
1
MSB842
Fig.2 SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
hFE
Cre
fT
GUM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
F noise figure
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter
open base
− − 20 V
− − 10 V
− − 50 mA
up to Ts = 85 °C
IC = 15 mA; VCE = 5 V
IC = 0; VCE = 8 V; f = 1 MHz
IC = 15 mA; VCE = 8 V; f = 500 MHz; Tamb = 25 °C
IC = 15 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C
60
500
100
0.5
7.5
15.5
mW
pF
GHz
dB
Γs = Γopt; IC = 5 mA; VCE = 8 V; f = 2 GHz
2.2 dB
August 1995
2




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