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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG541
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
NPN 9 GHz wideband transistor
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
DESCRIPTION
NPN silicon planar epitaxial
transistor, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satellite TV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
The transistors are mounted in a
plastic SOT223 envelope.
Product specification
BFG541
page
4
1
Top view
23
MSB002 - 1
Fig.1 SOT223.
September 1995
2
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