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PDF BFG540W Data sheet ( Hoja de datos )
| Número de pieza | BFG540W | |
| Descripción | NPN 9 GHz wideband transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
Product specification
Supersedes data of August 1995
File under Discrete Semiconductors, SC14
1997 Dec 04
1 page  
Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540W
BFG540W/X; BFG540W/XR
handboo2k,5h0alfpage
hFE
200
150
100
50
0
10−2
10−1
1
MRA749
10 102
IC (mA)
VCE = 8 V.
Fig.4 DC current gain as a function of
collector current; typical values.
handbook, h1alfpage
Cre
(pF)
0.8
0.6
0.4
0.2
0
0
4
MRA750
8 12
VCB (V)
IC = 0; f = 1 MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage; typical values.
handbook,1h2alfpage
fT
(GHz)
8
4
MLC044
VCE = 8 V
VCE = 4 V
0
10 1
1
10 I C (mA) 10 2
f = 1 GHz; Tamb = 25 °C.
Fig.6 Transition frequency as a function of
collector current; typical values.
1997 Dec 04
5
5 Page 
Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540W
BFG540W/X; BFG540W/XR
handbook, full pagewidth
135 o
90o
3 GHz
45 o
180 o
0.25 0.20 0.15 0.10 0.05
40 MHz
0o
135 o
45 o
VCE = 8 V; IC = 40 mA.
90o
MLC055
Fig.21 Common emitter reverse transmission coefficient (s12); typical values.
handbook, full pagewidth
135 o
0.5
90 o
1
0.2
180 o 0
0.2
0.2
0.5
3 GHz
1
1.0
2 45o
0.8
0.6
0.4
5
0.2
25
0o 0
40 MHz
5
135 o
0.5
VCE = 8 V; IC = 40 mA; Zo = 50 Ω.
1
90 o
2
45 o
MLC056
1.0
Fig.22 Common emitter output reflection coefficient (s22); typical values.
1997 Dec 04
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BFG540W.PDF ] | |
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