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PDF BFG520W Data sheet ( Hoja de datos )
| Número de pieza | BFG520W | |
| Descripción | NPN 9 GHz wideband transistors | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D123
BFG520W; BFG520W/X
NPN 9 GHz wideband transistors
Product specification
Supersedes data of August 1995
1998 Oct 02
1 page  
Philips Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG520W; BFG520W/X
150
handbook, halfpage
h FE
100
MLB807
handbook0, .h6alfpage
C re
(pF)
0.4
MLB808
50 0.2
0
10 1
1
10 I C (mA) 102
VCE = 6 V.
Fig.3 DC current gain as a function of collector
current; typical values.
0
0 2.5 5 7.5 10
VCB (V)
IC = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
12
handbook, halfpage
fT
(GHz)
8
4
MLB809
VCE =
6V
3V
0
1
10
I C (mA)
10 2
f = 1 GHz; Tamb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
1998 Oct 02
5
5 Page 
Philips Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG520W; BFG520W/X
handbook, full pagewidth
135 o
90o
3 GHz
45 o
180 o
0.25 0.20 0.15 0.10 0.05
40 MHz
0o
135 o
45 o
VCE = 6 V; IC = 20 mA.
90o MLB816
Fig.20 Common emitter reverse transmission coefficient (S12); typical values.
handbook, full pagewidth
135 o
0.5
0.2
180 o 0
0.2
0.5
0.2
90 o
1
12
3 GHz
2 45o
5
5
40 MHz
5
1.0
0.8
0.6
0.4
0.2
0o 0
135 o
0.5
VCE = 6 V; IC = 20 mA; Zo = 50 Ω.
1
90 o
2
45 o
MLB817
1.0
Fig.21 Common emitter output reflection coefficient (S22); typical values.
1998 Oct 02
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BFG520W.PDF ] | |
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