파트넘버.co.kr BFG35 데이터시트 PDF


BFG35 반도체 회로 부품 판매점

NPN 4 GHz wideband transistor



NXP Semiconductors 로고
NXP Semiconductors
BFG35 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG35
NPN 4 GHz wideband transistor
Product specification
Supersedes data of 1995 Sep 12
1999 Aug 24


BFG35 데이터시트, 핀배열, 회로
NXP Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFG35
DESCRIPTION
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope, intended for wideband
amplifier applications. It features high
output voltage capabilities.
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
lfpage
4
1
Top view
23
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCEO
IC
Ptot
hFE
fT
GUM
Vo
collector-emitter voltage
open base
DC collector current
total power dissipation
DC current gain
up to Ts = 135 C (note 1)
IC = 100 mA; VCE = 10 V; Tj = 25 C
transition frequency
IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 C
maximum unilateral power gain IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 C
IC = 100 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 C
output voltage
IC = 100 mA; VCE = 10 V;
dim = 60 dB; RL = 75 ;
f(p+qr) = 793.25 MHz; Tamb = 25 C
MIN.
25
TYP.
70
4
15
11
750
MAX. UNIT
18 V
150 mA
1W
GHz
dB
dB
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to Ts = 135 C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN.
65
MAX.
25
18
2
150
1
+150
175
UNIT
V
V
V
mA
W
C
C
1999 Aug 24
2




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BFG35 transistor

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