BFG19S 반도체 회로 부품 판매점
NPN Silicon RF Transistor
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 Infineon Technologies AG |
NPN Silicon RF Transistor
For low noise, low distortion broadband
amplifiers in antenna and
telecommunication systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
BFG 19S
4
3
2
1 VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFG 19S
Marking
BFG19S
Pin Configuration
1=E 2=B 3=E 4=C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS 75 °C 1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Value
15
20
20
3
100
12
1
150
-65 ... 150
-65 ... 150
75
Unit
V
mA
W
°C
K/W
1TS is measured on the collector lead at the soldering point to the pcb
1
Oct-26-1999
BFG 19S
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 70 mA, VCE = 8 V
V(BR)CEO 15
-
-
ICES
- - 100
ICBO
- - 100
IEBO
- - 10
hFE 40 100 220
Unit
V
µA
nA
µA
-
2 Oct-26-1999
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PDF 파일 내의 페이지 : 총 6 페이지
제조업체: Infineon Technologies AG
( infineon )
BFG19S transistor
데이터시트 다운로드 :
[ BFG19S.PDF ]
[ BFG19S 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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