파트넘버.co.kr BFG196 데이터시트 PDF


BFG196 반도체 회로 부품 판매점

NPN Silicon RF Transistor



Infineon Technologies AG 로고
Infineon Technologies AG
BFG196 데이터시트, 핀배열, 회로
NPN Silicon RF Transistor
 For low noise, low distortion broadband
amplifiers in antenna and telecommunication
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
 Power amplifier for DECT and PCN Systems
 fT = 7.5 GHz
F = 1.5 dB at 900 GHz
BFG196
4
3
2
1 VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFG196
Marking
BFG196
Pin Configuration
Package
1 = E 2 = B 3 = E 4 = C SOT223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS  90 °C 1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 2)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Value
12
20
20
2
100
12
800
150
-65 ... 150
-65 ... 150
 75
Unit
V
mA
mW
°C
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1 Jun-27-2001


BFG196 데이터시트, 핀배열, 회로
BFG196
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 50 mA, VCE = 8 V
V(BR)CEO 12
-
-V
ICES
- - 100 µA
ICBO
- - 100 nA
IEBO
- - 1 µA
hFE 50 100 200 -
2 Jun-27-2001




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제조업체: Infineon Technologies AG

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BFG196 transistor

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