파트넘버.co.kr BFG194 데이터시트 PDF


BFG194 반도체 회로 부품 판매점

PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)



Siemens Semiconductor Group 로고
Siemens Semiconductor Group
BFG194 데이터시트, 핀배열, 회로
PNP Silicon RF Transistor
• For low distortion broadband amplifiers in
antenna and telecommunications systems up
to 1.5 GHz at collector currents from 20mA
to 80mA
BFG 194
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFG 194 BFG194 Q62702-F1321
1=E 2=B 3=E 4=C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 75 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
15
20
3
100
10
1000
150
- 65 ... + 150
- 65 ... + 150
75
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Aug-22-1996


BFG194 데이터시트, 핀배열, 회로
BFG 194
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 70 mA, VCE = 8 V
V(BR)CEO
15
ICBO
-
IEBO
-
hFE
15
-
-
-
50
max.
-
100
1
-
Unit
V
nA
µA
-
Semiconductor Group
2
Aug-22-1996




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BFG194 transistor

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국내 전력반도체 판매점


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